Electron Beam Lithography at the NCFL
The JEOL JBX-8100FS Electron Beam Lithography (EBL) System, located in Virginia Tech's Nanoscale Characterization and Fabrication Laboratory (NCFL), is a premier tool for advanced micro- and nanofabrication.
As one of the most advanced EBL systems in the United States, it offers exceptional capabilities for researchers across diverse scientific disciplines. With its 200kV thermal field emission electron gun, the JBX-8100FS achieves an ultrahigh resolution of 2 nm, enabling the fabrication of intricate nanostructures with unmatched precision.
Whether your project demands the finest detail resolution (sub-3 nm beam diameter) or efficient patterning of larger areas (10 nm resolution), this system adapts to your specific needs through its high-resolution and high-throughput modes.
The JBX-8100FS's laser stage measurement ensures impeccable pattern placement and overlay accuracy, facilitating the development of cutting-edge devices in fields such as quantum computing, nanophotonics, and microelectronics.
Applications include quantum devices such as quantum dots, low-dimensional quantum materials, quantum nanophotonic structures, and superconducting circuits. In optics and photonics, applications span meta-optics, nano-plasmonics, and bio-photonics. Additional areas include next-generation CMOS and power electronic devices.
Accelerating Voltages: 100kV or 200kV
Current: 400 pA – 100 nA
Scan Speed: up to 125 MHz
Field Size High Resolution High Throughput
100kV 100 µm x 100 µm 1000 µm x 1000 µm
200kV 50 µm x 50 µm 500 µm x 500 µm
Stage Movement: 190 mm x 170 mm with 0.6 nm resolution
Minimum Line Width: 8 nm
Minimum Step Size: 0.5 nm
Overlay Accuracy: ±6 nm (actual, high throughput mode)
Field Stitching: ±16 nm (actual, high throughput mode)
Sample Size: up to 150 mm
- 12 cassette automatic sample loader.
- Temperature controlled enclosure maintains stage temperature drift <0.005 °C/hr.
- Internal optical microscope for sample/alignment mark locating.
- Beamer 7.1.0 pattern fracturing software with proximity effect correction (PEC)
- Photoresist Spinning and Development
- Optical Microscopes and SEM available for exposure evaluation.
Contact & Scheduling
Eric Carlson
Electron Beam Lithography Facility Manager